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Product Description
Sirenza Microdevices' SGB-6533 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply the SGB-6533 does not require a drop resistor as compared to typical Darlington amplifiers. This robust amplifier features a Class 1C ESD rating, low thermal resistance , and unconditional stability. The SGB-6533 product is designed for high linearity 5V gain block applications that require small size and minimal external components. It is on chip matched to 50 ohm and an external bias inductor choke is required for the application band.
SGB-6533
DC - 3 GHz Active Bias Gain Block
Product Features
Functional Block Diagram
Vbias VCC NC NC Active Bias
NC NC
NC NC RFOUT
* * * * * * * * *
High reliability SiGe HBT Technology Robust Class 1C ESD Simple and small size P1dB = 18.5 dBm @ 1950MHz IP3 = 32 dBm @ 1950MHz Low Thermal Resistance = 60 C/W
RFIN NC
Applications
NC
5V applications LO buffer amp RF pre-driver and RF receive path
Key Specifications
Symbol fO S21 Parameters: Test Conditions Z0 = 50, VCC = 5.0V, Ic = 88mA, T = 30C) Frequency of Operation Small Signal Gain - 850MHz Small Signal Gain - 1950MHz Small Signal Gain - 2400MHz Output Power at 1dB Compression - 850MHz P1dB Output Power at 1dB Compression - 1950MHz Output Power at 1dB Compression - 2400MHz Output IP3 - 850MHz OIP3 Output IP3 - 1950MHz Output IP3 - 2400MHz IRL ORL Ic NF Rth, j-l Input Return Loss @ 1950MHz Output Return Loss @1950MHz Current Noise Figure @1950MHz Thermal Resistance (junction - lead) dB dB mA dB C/W 11.0 10.0 76 dB 30.0 dBm 17.0 dB 17.0 Unit MHz Min. DC 25.0 18.5 17.0 19.0 18.5 18.0 32.0 32.0 32.0 15.0 14.0 88 3.7 60 98 4.7 20.0 Typ. Max. 3000
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 South Technology Court, Broomfield, CO 80021
GND
NC
NC
NC
Phone: (800) SMI-MMIC 1
http://www.sirenza.com EDS-103099 Rev E
SGB-6533 DC-3GHz Active Bias Gain Block
Detailed Performance Table: Vcc=5V, Ic=88mA, T=25C, Z=50ohms
Symbol G OIP3 P1dB IRL ORL S12 NF Parameter Small Signal Gain Output 3rd Order Intercept Point Output Power at 1dB Compression Input Return Loss Output Return Loss Reverse Isolation Noise Figure Units dB dBm dBm dB dB dB dB 15.1 21.4 30.8 4.6 100MHz 28.4 500MHz 26.9 32.0 19.1 19.1 18.5 30.3 3.1 850MHz 25.0 32.0 19.0 26.4 15.3 29.7 3.1 1950MHz 18.5 32.0 18.5 15.0 14.0 26.2 3.7 2400MHz 17.0 32.0 18.0 13.5 11.9 25.4 4.2 8.7 13.6 22.9 4.9 3500MHz 13.1
Pin Out Description
Pin # 1,2,4, 6, 7,8,11, 12,14 3 5 10 13 16 Backside Function NC RFIN GND RFOUT VBIAS VCC GND Description These are no connect pins. Leave them unconnected on the PC board. RF input pin. A DC voltage should not be connected externally to this pin An extra ground pin that is connected to the backside exposed paddle. Connection is optional. RF Output pin. Bias is applied to the Darlington stage thru this pin. This pin sources the current from the active bias circuit. Connect to pin 10 thru an inductor choke. This is Vcc for the active bias circuit. The backside exposed paddle is the main electrical GND and requires multiple vias in the PC board to GND. It is also the main thermal path.
Simplified Device Schematic
16 15 14 13
Caution: ESD Sensitive
Appropriate precaution in handling, packaging and testing devices must be observed.
Absolute Maximum Ratings
Parameters Value 150 6.5 0.75 -40 to +85 15 7 -40 to +150 +150 Unit mA V W C dBm dBm C C
1 2
Active Bias
Current (Ic total)
12 11 10
Device Voltage (VD) Power Dissipation Operating Lead Temperature (TL) RF Input Power, Zload = 50 ohm RF Input Power, Zload > 10:1 VSWR Storage Temperature Range
3 4
9
Operating Junction Temperature (TJ)
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation the device voltage and current must not exceed the maximum operating values specified in the table on page one.
5
6
7
8
Bias conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH' j-l Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-103099 Rev E
303 South Technology Court, Broomfield, CO 80021
SGB-6533 DC-3GHz Active Bias Gain Block
Evaluation Board Data (Vcc=VBIAS = 5.0V, Ic = 88mA) Bias Tee is substituted for DC feed inductor (L1)
Gain vs. Frequency
30.0 28.0 26.0
34.0
OIP3 vs. Frequency
33.0
Gain (dB)
24.0 22.0 20.0 18.0 16.0 14.0 0.4 0.9 1.4 1.9 2.4 +25c +85c -40c
OIP3 (dBm)
32.0
31.0
30.0 +25c 29.0 +85c -40c 28.0 0.4 0.9 1.4 1.9 2.4
Frequency (GHz)
Frequency (GHz)
P1dB vs. Frequency
19.5 19.0
7.0 6.0
Noise Figure vs. Frequency
Noise Figure (dB)
18.5
5.0 4.0 3.0 2.0 1.0 0.0 +25c +85c -40c
P1dB (dBm)
18.0 17.5 17.0 16.5 16.0 0.4 0.9 1.4 1.9 2.4
+25c +85c -40c
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Frequency (GHz)
Frequency (GHz)
Ic vs. Temperature
0.160
0.120 0.115 0.110 0.105
Current vs. Voltage
0.140 0.120 0.100
Ic (mA)
0.100 0.095 0.090 0.085 0.080 0.075 0.070 + 85c + 25c -40c
Ic (A)
0.080 0.060 0.040 0.020 0.000 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 6.2
Temperature
303 South Technology Court, Broomfield, CO 80021
Vc (Volts)
Phone: (800) SMI-MMIC 3
http://www.sirenza.com EDS-103099 Rev E
SGB-6533 DC-3GHz Active Bias Gain Block
Evaluation Board Data (Vcc=VBIAS = 5.0V, Ic = 88mA) Bias Tee is substituted for DC feed inductor (L1)
l S21 l vs. Frequency
35.0 30.0 25.0
l S11 l vs. Frequency
0.0 -5.0 -10.0
+25c +85c -40c
S21 (dB)
20.0 15.0 10.0 5.0 0.0 0.0 1.0 2.0 3.0 4.0 5.0
S11 (dB)
-15.0 -20.0 -25.0 -30.0 -35.0 -40.0
+25c +85c -40c
6.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Frequency (GHz)
Frequency (GHz)
l S12 l vs. Frequency
-15.0
0.0 -5.0
l S22 l vs. Frequency
-20.0
-10.0 -15.0 -20.0 -25.0 -30.0 -35.0 -40.0 +25c +85c -40c
S12 (dB)
-25.0 +25c -30.0 +85c -40c
-35.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0
S22 (dB)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Frequency (GHz)
Frequency (GHz)
303 South Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC 4
http://www.sirenza.com EDS-103099 Rev E
SGB-6533 DC-3GHz Active Bias Gain Block
Typical Evaluation Board Schematic for 5.0V
Vcc
C4
C3
16 VCC NC NC Vbias
L1
NC NC RFOUT NC
1
NC NC
RFIN
RFIN
RFOUT C2
C1
NC Optional GND NC NC NC
Evaluation Board - Board material GETEK, 31mil thick, Dk=4.2, 1 oz. copper Component Values By Band
Designator 500MHz 1000pF 1uF 220pF 68 nH 850MHz 1000pF 1uF 68pF 33nH 1950MHz 2400MHz 1000pF 1uF 43pF 22nH 1000pF 1uF 22pF 18nH
C4
C3 C4* C1, C2 L1
C3
1
L1 C2
* C4 is optional depending on application and filtering. Not required for SGB device operation.
C1
Note: The amplifier can be run from a 8V supply by simply inserting a 33 ohm resistor in series with Vcc.
303 South Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC 5
http://www.sirenza.com EDS-103099 Rev E
SGB-6533 DC-3GHz Active Bias Gain Block
Part Marking
The part will be symbolized with an "SGB-6533" marking designator on the top surface of the package.
Part Number Ordering Information
Part Number SGB-6533 Reel Size 13" Devices/Reel 3000
Package Outline Drawing (Dimensions in mm)
Recommended Land Pattern (dimensions in mm[in].):
Recommended PCB Soldermask (SMOBC) for Land Pattern(dimensions in mm[in]):
0.50 [0.020] 0.25 [0.010] 0.53 [0.021]
1.58 [0.062] 0.50 [0.020] 0.26 [0.010] 0.38 [0.015] 0.29 [0.011] 1.58 [0.062] 0.21 [0.008]
3.17 [0.125]
1.20 [0.047]
0.75 [0.030] 0.005 CHAMFER (8PL)
O0.38 [O0.015] Plated Thru (4PL)
0.46 [0.018] 1.20 [0.047]
303 South Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC 6
http://www.sirenza.com EDS-103099 Rev E

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